| PART |
Description |
Maker |
| 2SA1953 |
TRANSISTOR (GENERAL PURPOSE AMPLIFIER, SWITCHING AND MUTING SWITCH APPLICATIONS) 晶体管（通用放大器，开关和静音开关应用）
TRANSISTOR (GENERAL PURPOSE AMPLIFIER/ SWITCHING AND MUTING SWITCH APPLICATIONS)
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| L2SA2030M3T5G11 |
Low frequency transistor For switching, for muting.
|
Leshan Radio Company
|
| 2SA1953 2SA195307 |
General Purpose Amplifier Applications Switching and Muting Switch Application
|
Toshiba Semiconductor
|
| RN144107 RN1443 RN1442 RN1444 RN1441 |
Silicon NPN Epitaxial Type (PCT Process) Muting And Switching Applications
|
Toshiba Semiconductor
|
| HN1C03FU |
Transistor Silicon Npn Epitaxial Type (PCT Process) For Muting and Switching Applications
|
TOSHIBA
|
| 2SA1953 |
Transistor Silicon PNP Epitaxial Type (PCT process) General Purpose Amplifier Applications Switching and Muting Switch Application
|
TOSHIBA
|
| 2SC5233 |
Transistor Silicon NPN Epitaxial Type (PCT process) General Purpose Amplifier Applications Switching and Muting Switch Application
|
TOSHIBA
|
| 2SC5376F |
Transistor Silicon NPN Epitaxial Type Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications
|
TOSHIBA
|
| HN1C03F E001972 |
NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS)
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| HN1C03FU E001973 |
NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS)
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC3327 2SC3327B |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | SPAK
TRANSISTOR SILICON NPN EPITAXIAL TYPE FOR MUTING AND SWITCHING APPLICATIONS
|
TOSHIBA
|
| 2SD2704K12 |
For Muting
|
Rohm
|
